UltraRAM Breakthrough Brings New Memory and Storage Tech to Silicon, claiming DRAM-like speeds and non-volatility for a thousand years

Scientists from the Physics and Engineering Department of the UK’s Lancaster University have published a paper detailing a breakthrough in the mass production of UltraRAM. Researchers have pondered over this novel memory type for several years due to its highly attractive qualities, and the latest breakthrough means that mass production on silicon wafers could be within sight. UltraRAM is described as a memory technology which “combines the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM.”

The researchers claim that the latest incarnation on silicon outperforms the technology as tested on Gallium Arsenide semiconductor wafers.

However, we have already seen some similarly heralded ideas fall by the wayside; resistive RAM, magnetoresistive RAM, and phase-change memory, haven’t made the impact that some initial reports foresaw. And of course, the price-point will be critical.

See https://www.tomshardware.com/news/ultraram-implemented-in-silicon-for-first-time

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